Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi2Te3

نویسندگان

  • Arsham Ghasemi
  • Demie Kepaptsoglou
  • Pedro L Galindo
  • Quentin M Ramasse
  • Thorsten Hesjedal
  • Vlado K Lazarov
چکیده

We present a structural and density functional theory study of FexCu1− xSe within the three-dimensional topological insulator Bi2Te3. The FexCu1− xSe inclusions are single-crystalline and epitaxially oriented with respect to the Bi2Te3 thin film. Aberrationcorrected scanning transmission electron microscopy and electron energy loss spectroscopy show an atomically sharp FeICu1− xSe/Bi2Te3 interface. The FexCu1− xSe/Bi2Te3 interface is determined by Se–Te bonds and no misfit dislocations are observed, despite the different lattice symmetries and large lattice mismatch of ∼19%. First-principle calculations show that the large strain at the FexCu1− xSe/Bi2Te3 interface can be accommodated by van der Waals-like bonding between Se and Te atoms. NPG Asia Materials (2017) 9, e402; doi:10.1038/am.2017.111; published online 7 July 2017

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تاریخ انتشار 2017